LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications

Nb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications

Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications

Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications

The charge-trapping characteristics of Ga2O3 (Gd2O3 ) (denoted as GGO) with and without nitrogen incorporation were investigated based on Al/Al2O3 / GGO/SiO2 /Si (metalalumina-nitride-oxide-silicon) capacitors. Compared with the capacitor without nitrogen incorporation, the one with nitrided GGO showed a larger memory window (10 V at ±16 V, 1 s), a higher program speed with a low gate voltage (...

Charge-trapping characteristics of BaTiO3 with and without nitridation for nonvolatile memory applications

The charge-trapping characteristics of BaTiO3 with and without nitrogen incorporation were investigated based on Al/Al2O3/BaTiO3/SiO2/Si (MONOS) capacitors. The physical properties of the high-k films were analyzed by transmission electron microscopy and X-ray photoelectron spectroscopy. Compared with the MONOS capacitor with BaTiO3 as charge-trapping layer, the one with nitrided BaTiO3 showed ...

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al2O3-TiAlO-SiO2 dielectric stack demonstrates significant memory effects and excellent reliability properties. The memory device exhibits a large memory window of ~2.6 V under ±8 V sweeping voltage, and it shows only ~14% charge loss after more t...